عنوان مقاله [English]
This investigation is a computational analysis of one category of radiation effects on electronic devices, known as single event upset (SEU) with Geant4 toolkit. The results are compared with similar experimental work and a simulation study which is performed by CRÈME-MC Monte Carlo simulation code. Single event upsets are the most common events which abruptly change the logic state of device (1 to 0 or vice versa) and cause disturbance in their performance. In the simulations, low energy protons (< 10 MeV)-induced SEU cross sections in a 65 nm CMOS SRAM were calculated and various particles effectivenesses and physical mechanisms inducing upsets were studied. The analysis of the results showed that most of the upsets occur due to incident protons with energies of less than 1 MeV under the mechanism of direct ionization. This is due to the fact that protons entering the sensitive volume have the maximum stopping power. This study also revealed that for protons with energies between 2 and 10 MeV, recoiled silicon atoms has a dominant role in SEU while other particles produced in preceding layers have a negligible effect comparing to the recoiled silicon produced inside the sensitive volume.