عنوان مقاله [English]
نویسندگان [English]چکیده [English]
In this paper, the effect of the potential barrier and open area of Silicon along the crystallographic direction and on the channeling stopping power and the channeling half- distance for protons are investigated. The channeling stopping power and the channeling half- distance for protons are measured by simulation of the channeling spectra in the energy range of Ep=1800-2200keV. It is assumed that the dechanneling process behaves exponentially. It showed that the channeling stopping power for protons decreases when the potential barrier and open area of channel increase. Furthermore, the channeling half- distance increases by increasing the open area of the channel.
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